Datasheet Texas Instruments CSD17308Q3 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17308Q3 |
30V N沟道NexFET™功率MOSFET
数据表
CSD17308Q3 30-V N-Channel NexFETв„ў Power MOSFETs datasheet
PDF, 406 Kb, 修订版: B, 档案已发布: Oct 29, 2015
从文件中提取
价格
状态
| CSD17308Q3 | CSD17308Q3T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD17308Q3 | CSD17308Q3T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQG | DQG |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD17308 | CSD17308 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD17308Q3 | CSD17308Q3T |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 47 | 47 |
| IDM, Max Pulsed Drain Current(Max), A | 78 | 78 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 3.9 | 3.9 |
| QGD Typ, nC | 0.8 | 0.8 |
| RDS(on) Typ at VGS=4.5V, mOhm | 9.4 | 9.4 |
| Rds(on) Max at VGS=4.5V, mOhms | 11.8 | 11.8 |
| VDS, V | 30 | 30 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.3 | 1.3 |
生态计划
| CSD17308Q3 | CSD17308Q3T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- A solar-powered buck/boost battery chargerPDF, 334 Kb, 档案已发布: Apr 26, 2012
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17308Q3 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor