Datasheet Texas Instruments CSD16327Q3 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD16327Q3 |
N沟道NexFET功率MOSFET
数据表
CSD16327Q3 25-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 419 Kb, 修订版: A, 档案已发布: Sep 28, 2016
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状态
| CSD16327Q3 | CSD16327Q3T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD16327Q3 | CSD16327Q3T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQG | DQG |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD16327 | CSD16327 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD16327Q3 | CSD16327Q3T |
|---|---|---|
| Configuration | Single | Single |
| IDM, Max Pulsed Drain Current(Max), A | 112 | 112 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 6.2 | 6.2 |
| QGD Typ, nC | 1.1 | 1.1 |
| RDS(on) Typ at VGS=4.5V, mOhm | 4 | 4 |
| Rds(on) Max at VGS=4.5V, mOhms | 4.8 | 4.8 |
| VDS, V | 25 | 25 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 1.2 | 1.2 |
生态计划
| CSD16327Q3 | CSD16327Q3T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD16327Q3 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor