Datasheet Texas Instruments TS3A5018DRE4 — 数据表

10欧姆四路SPDT模拟开关16-SOIC -40至85

数据表

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	Yes

Bandwidth	300 MHz
Bandwidth(Max)	300 MHz
Configuration	2:1 SPDT
ESD Charged Device Model	1 kV
ESD HBM	2 kV
Input/Ouput Voltage(Max)	3.6 V
Input/Output Continuous Current(Max)	64 mA
Input/Output OFF-state Capacitance(Typ)	3 pF
Input/Output ON-state Capacitance(Typ)	16 pF
Number of Channels	4
OFF-state leakage current(Max)	10 µA
ON-state leakage current(Max)	2 µA
Operating Temperature Range	-40 to 85 C
Package Group	SOIC
Package Size: mm2:W x L	16SOIC: 59 mm2: 6 x 9.9(SOIC) PKG
Rating	Catalog
Ron(Max)	22 Ohms
Ron(Typ)	5.5 Ohms
Supply Current(Max)	2 uA
Supply Current(Typ)	0.7 uA
Supply Range	3.6 Max
VIH(Min)	1 V
VIL(Max)	0.8 V
Vdd(Max)	3.6 V
Vdd(Min)	1.65 V
Vss(Max)	N/A V
Vss(Min)	N/A V

RoHS

Compliant

Evaluation Modules & Boards: MMWAVE-DEVPACK
mmWave Development Pack (DevPack)
Lifecycle Status: Active (Recommended for new designs)
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Preventing Excess Power Consumption on Analog Switches
PDF, 238 Kb, 档案已发布: Jul 3, 2008
Analog switches are extensively used for switching audio signals in battery-powered applications, such as mobile phones. In any cases, the switch is powered directly from the battery, but it receives control signals from a lower voltage processor GPIO. For most analog switches, this application condition leads to an excess supply current draw that catches system designers by surprise. This applica

系列: TS3A5018 (15)