Datasheet Texas Instruments UC2705D — 数据表

制造商Texas Instruments
系列UC2705
零件号UC2705D
Datasheet Texas Instruments UC2705D

互补高速功率驱动器8-SOIC -40至85

数据表

High Speed Power Driver datasheet
PDF, 891 Kb, 修订版: D, 档案已发布: Mar 8, 2012
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin8
Package TypeD
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY75
CarrierTUBE
Device MarkingUC2705D
Width (mm)3.91
Length (mm)4.9
Thickness (mm)1.58
Pitch (mm)1.27
Max Height (mm)1.75
Mechanical Data下载

参数化

Channel Input LogicN/A
Fall Time40 ns
Input ThresholdTTL
Input VCC(Max)40 V
Input VCC(Min)5 V
Number of Channels1
Operating Temperature Range-40 to 85 C
Package GroupSOIC
Peak Output Current1.5 A
Power SwitchMOSFET,IGBT
Prop Delay100 ns
RatingCatalog
Rise Time40 ns
Special FeaturesN/A

生态计划

RoHSCompliant

应用须知

  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, 档案已发布: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, 档案已发布: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

模型线

系列: UC2705 (4)

制造商分类

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver