Datasheet Texas Instruments LM5109BQNGTTQ1 — 数据表

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SNVSAG6A – NOVEMBER 2015 – REVISED DECEMBER 2015 LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver
1 Features 3 Description The LM5109B-Q1 is a cost effective, high voltage
gate driver designed to drive both the high-side and
the low-side N-Channel MOSFETs in a synchronous
buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up
to 90 V. The outputs are independently controlled
with TTL/CMOS compatible logic input thresholds.
The robust level shift technology operates at high
speed while consuming low power and providing
clean level transitions from the control input logic to
the high-side gate driver. Under-voltage lockout is
provided on both the low-side and the high-side
power rails. The device is available in the thermally
enhanced WSON(8) packages. 1 Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results
– Device Temperature Grade 1
– Device HBM ESD Classification Level 1C …