Datasheet Texas Instruments CSD17575Q3 — 数据表

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SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3 mm Г— 3.3 mm Plastic Package TA = 25В°C 30 V Qg Gate Charge Total (4.5V) 23 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance Vth Threshold Voltage Media Qty Package Ship 2500 CSD17575Q3T 13-Inch Reel 250 SON 3.3 Г— 3.3 mm
Plastic Package Tape and
Reel TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package Limit) 60 Continuous Drain Current (Silicon Limit),
TC = 25В°C 182 (1) D 7 2 D PD 27 Pulsed Drain Current(2) 240 Power Dissipation(1) 2.8 Power Dissipation, TC = 25В°C 108
–55 to 150 °C 115 mJ D TJ,
Tstg Operating Junction and
Storage Temperature Range 5 D EAS Avalanche Energy, single pulse
ID = 48, L = 0.1 mH, RG = 25 Ω A
W (1) Typical RОёJA = 45В°C/W on 1-inch2 Cu (2 oz.) on 0.060-inch …