Datasheet Texas Instruments LM5109BSDX/NOPB — 数据表
| 制造商 | Texas Instruments |
| 系列 | LM5109B |
| 零件号 | LM5109BSDX/NOPB |
高压1A峰值半桥栅极驱动器8-WSON -40至125
数据表
LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver datasheet
PDF, 1.4 Mb, 修订版: C, 档案已发布: Oct 15, 2015
从文件中提取
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | NGT |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 4500 |
| Carrier | LARGE T&R |
| Device Marking | 5109BSD |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .8 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | 下载 |
参数化
| Bus Voltage | 90 V |
| Channel Input Logic | TTL |
| Fall Time | 15 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 14 V |
| Input VCC(Min) | 8 V |
| Iq | 10 uA |
| Negative Voltage Handling at HS Pin | -1 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | WSON |
| Peak Output Current | 1 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Catalog |
| Rise Time | 15 ns |
| Special Features | N/A |
生态计划
| RoHS | Compliant |
应用须知
- AN-1317 Selection of External Bootstrap Diode for LM510X Devices (Rev. A)PDF, 91 Kb, 修订版: A, 档案已发布: May 6, 2013
This application report discusses the selection of an external bootstrap diode for LM510X devices.
模型线
系列: LM5109B (5)
- LM5109BMA LM5109BMA/NOPB LM5109BMAX/NOPB LM5109BSD/NOPB LM5109BSDX/NOPB
制造商分类
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver