Datasheet Texas Instruments UC1709J — 数据表

反相高速MOSFET驱动器8-CDIP -55至125

数据表

PDF, 548 Kb, 修订版: C, 档案已发布: Feb 27, 2008

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	No

Fall Time	40 ns
Input Threshold	TTL
Input VCC(Max)	40 V
Input VCC(Min)	5 V
Number of Channels	2
Operating Temperature Range	-55 to 125 C
Package Group	CDIP
Peak Output Current	1.5 A
Power Switch	MOSFET
Prop Delay	25 ns
Rating	Military
Rise Time	40 ns
Special Features	Thermal Shutdown

RoHS	See ti.com

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U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
PDF, 573 Kb, 档案已发布: Sep 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
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U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
PDF, 244 Kb, 档案已发布: Sep 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

系列: UC1709 (4)

Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver