Datasheet Texas Instruments V62/11601-02YE — 数据表
| 制造商 | Texas Instruments |
| 系列 | UCC27322-EP |
| 零件号 | V62/11601-02YE |
具有使能8-SOIC -55至125的增强型产品单路9A高速低侧MOSFET驱动器
数据表
Single 9-A High Speed Low-Side MOSFET Driver With Enable datasheet
PDF, 1.0 Mb, 修订版: C, 档案已发布: Mar 15, 2013
从文件中提取
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 27322M |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Fall Time | 20 ns |
| Input Threshold | CMOS,TTL |
| Input VCC(Max) | 15 V |
| Input VCC(Min) | 4 V |
| Number of Channels | 1 |
| Operating Temperature Range | -40 to 105,-55 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 9 A |
| Power Switch | MOSFET,IGBT |
| Prop Delay | 25 ns |
| Rating | HiRel Enhanced Product |
| Rise Time | 20 ns |
| Special Features | Enable Pin |
生态计划
| RoHS | Compliant |
模型线
系列: UCC27322-EP (6)
- UCC27322MDEP UCC27322MDREP UCC27322TDGKREP V62/11601-01XE V62/11601-02YE V62/11601-02YE-T
制造商分类
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver
其他名称:
V62/1160102YE, V62/11601 02YE