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SLPS383B – SEPTEMBER 2012 – REVISED OCTOBER 2014 CSD18534KCS 60 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C UNIT Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 19 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 3.1 nC VGS = 4.5 V 10.2 mΩ VGS = 10 V 7.6 mΩ 1.9 V Ordering Information(1)
Device Package Media Qty Ship CSD18534KCS TO-220 Plastic
Package Tube 50 Tube 2 Applications TYPICAL VALUE VDS DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25В°C This 7.6 mО©, 60 V TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 73 Continuous Drain Current (Silicon limited), …
