Datasheet Texas Instruments CSD17556Q5BT — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17556Q5B |
| 零件号 | CSD17556Q5BT |
30V N沟道NexFET功率MOSFET 8-VSON-CLIP -55至150
数据表
CSD17556Q5B 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 871 Kb, 修订版: C, 档案已发布: Jan 17, 2017
从文件中提取
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DNK |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD17556 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | .95 |
| Mechanical Data | 下载 |
参数化
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 215 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 28.5 nC |
| QGD Typ | 6.9 nC |
| RDS(on) Typ at VGS=4.5V | 1.5 mOhm |
| Rds(on) Max at VGS=10V | 1.4 mOhms |
| Rds(on) Max at VGS=4.5V | 1.8 mOhms |
| VDS | 30 V |
| VGS | 20 V |
| VGSTH Typ | 1.4 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17556Q5B (2)
- CSD17556Q5B CSD17556Q5BT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor