Datasheet Texas Instruments CSD87312Q3E-ASY — 数据表

制造商Texas Instruments
系列CSD87312Q3E
零件号CSD87312Q3E-ASY
Datasheet Texas Instruments CSD87312Q3E-ASY

双30V N沟道NexFET功率MOSFET 8-VSON -55至150

数据表

Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, 档案已发布: Nov 19, 2011
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价格

状态

Lifecycle StatusPreview (Device has been announced but is not in production. Samples may or may not be available)
Manufacture's Sample AvailabilityNo

打包

Pin8
Package TypeDPB
Width (mm)3.3
Length (mm)3.3
Thickness (mm).9
Mechanical Data下载

参数化

Approx. Price (US$)0.35 | 1ku
ConfigurationDual Common Source
IDM, Max Pulsed Drain Current(Max)(A)45
Package (mm)SON3x3
QG Typ(nC)6.3
QGD Typ(nC)0.7
RDS(on) Typ at VGS=4.5V(mOhm)31
Rds(on) Max at VGS=4.5V(mOhms)38
VDS(V)30
VGS(V)10
VGSTH Typ(V)1

生态计划

RoHSNot Compliant
Pb FreeNo

模型线

系列: CSD87312Q3E (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor

其他名称:

CSD87312Q3EASY, CSD87312Q3E ASY