Datasheet Texas Instruments CSD83325L — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD83325L |
| 零件号 | CSD83325L |
CSD83325L，双N沟道NexFET™功率MOSFET 6-PICOSTAR
数据表
CSD83325L 12-V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 1.2 Mb, 修订版: B, 档案已发布: Feb 16, 2017
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状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 6 |
| Package Type | YJE |
| Package QTY | 3000 |
| Carrier | LARGE T&R |
| Device Marking | 83325L |
| Width (mm) | 2.16 |
| Length (mm) | 1.11 |
| Thickness (mm) | .2 |
| Mechanical Data | 下载 |
参数化
| Configuration | Dual |
| IDM, Max Pulsed Drain Current(Max) | 52 A |
| Package | LGA mm |
| QG Typ | 8.4 nC |
| QGD Typ | 1.9 nC |
| RDS(on) Typ at VGS=4.5V | 4.9 mOhm |
| Rds(on) Max at VGS=4.5V | 5.9 mOhms |
| VDS | 12 V |
| VGS | 10 V |
| VGSTH Typ | 0.95 V |
生态计划
| RoHS | Compliant |
模型线
系列: CSD83325L (2)
- CSD83325L CSD83325LT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor