Datasheet Texas Instruments UC1707J/80313 — 数据表

制造商Texas Instruments
系列UC1707
零件号UC1707J/80313
Datasheet Texas Instruments UC1707J/80313

互补高速功率驱动器16-CDIP -55至125

数据表

Dual Channel Power Driver datasheet
PDF, 973 Kb, 修订版: B, 档案已发布: Sep 16, 2008
从文件中提取

价格

状态

Lifecycle StatusObsolete (Manufacturer has discontinued the production of the device)
Manufacture's Sample AvailabilityNo

打包

Pin16
Package TypeJ
Industry STD TermCDIP
JEDEC CodeR-GDIP-T
Width (mm)6.92
Length (mm)19.56
Thickness (mm)4.57
Pitch (mm)2.54
Max Height (mm)5.08
Mechanical Data下载

参数化

Channel Input LogicInverting
Fall Time(ns)40
Input ThresholdTTL
Input VCC(Max)(V)40
Input VCC(Min)(V)5
Iq(uA)50
Number of Channels(#)2
Operating Temperature Range(C)-55 to 125
Package GroupCDIP
Peak Output Current(A)1.5
Power SwitchMOSFET
Prop Delay(ns)100
RatingMilitary
Rise Time(ns)40

生态计划

RoHSNot Compliant
Pb FreeNo

应用须知

  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, 档案已发布: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-111 Practical Considerations in Current Mode Power Supplies
    PDF, 787 Kb, 档案已发布: Sep 5, 1999
    This application note explains the numerous PWM functions and ways to maximize their usefulness. It covers practical circuit design considerations such as slope compensation gate drive circuitry external control functions synchronization and paralleling current-mode controlled modules. Circuit diagrams and simplified equations are included.
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, 档案已发布: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

模型线

制造商分类

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver