Datasheet Texas Instruments CSD17559Q5T — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17559Q5 |
| 零件号 | CSD17559Q5T |
30V N沟道NexFET™功率MOSFET 8-VSON-CLIP -55至150
数据表
CSD17559Q5 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 409 Kb, 修订版: A, 档案已发布: Sep 9, 2014
从文件中提取
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DQH |
| Industry STD Term | VSON-CLIP |
| JEDEC Code | R-PSSO-N |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD17559 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | 1 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.05 |
| Mechanical Data | 下载 |
参数化
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 257 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 39 nC |
| QGD Typ | 9.3 nC |
| RDS(on) Typ at VGS=4.5V | 1.15 mOhm |
| Rds(on) Max at VGS=10V | 1.15 mOhms |
| Rds(on) Max at VGS=4.5V | 1.5 mOhms |
| VDS | 30 V |
| VGS | 20 V |
| VGSTH Typ | 1.4 V |
生态计划
| RoHS | Compliant |
| Pb Free | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17559Q5 (2)
- CSD17559Q5 CSD17559Q5T
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor