Datasheet Texas Instruments UCC27531DR — 数据表
| 制造商 | Texas Instruments |
| 系列 | UCC27531 |
| 零件号 | UCC27531DR |
2.5A，5A，35VMAX VDD FET和IGBT单栅极驱动器8-SOIC -40至125
数据表
UCC2753x 2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver datasheet
PDF, 1.6 Mb, 修订版: F, 档案已发布: Jul 13, 2015
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 27531D |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Channel Input Logic | Non-Inverting,Single |
| Fall Time | 7 ns |
| Input Negative Voltage | -5 V |
| Input Threshold | CMOS,TTL |
| Input VCC(Max) | 32 V |
| Input VCC(Min) | 10 V |
| Number of Channels | 1 |
| Operating Temperature Range | -40 to 125,-40 to 140 C |
| Package Group | SOIC |
| Peak Output Current | 5 A |
| Power Switch | MOSFET,IGBT,SiCFET |
| Prop Delay | 17 ns |
| Rating | Catalog |
| Rise Time | 15 ns |
| Special Features | Split Output |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: UCC27531EVM-184
UCC27531 Evaluation Module
Lifecycle Status: Active (Recommended for new designs) - Daughter Cards: UCC27532EVM-538
Gate Driver daughter card with isolation based on UCC27532
Lifecycle Status: Active (Recommended for new designs)
应用须知
- 35-V single-channel gate drivers for IGBT and MOSFET renewable energy appsPDF, 107 Kb, 档案已发布: Jan 22, 2013
- UCC27531 35-V Gate Driver for SiC MOSFET ApplicationsPDF, 603 Kb, 档案已发布: Mar 15, 2016
- Using a Single-Output Gate-Driver for High-Side or Low-Side DrivePDF, 181 Kb, 档案已发布: Jan 15, 2013
- 1Q 2013Issue Analog Applications JournalPDF, 1.1 Mb, 档案已发布: Jan 22, 2013
模型线
系列: UCC27531 (4)
- UCC27531D UCC27531DBVR UCC27531DBVT UCC27531DR
制造商分类
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver