Datasheet Texas Instruments UCC27714DR — 数据表
| 制造商 | Texas Instruments | 
| 系列 | UCC27714 | 
| 零件号 | UCC27714DR | 

高速4A,600V高侧低侧栅极驱动器14-SOIC -40至125
数据表
UCC27714 High-Speed, 600-V High-Side Low-Side   Gate Driver    with 4-A Peak Output datasheet
PDF, 2.6 Mb, 修订版: B, 档案已发布: Feb 8, 2017
从文件中提取
状态
| Lifecycle Status | Active (Recommended for new designs) | 
| Manufacture's Sample Availability | Yes | 
打包
| Pin | 14 | 
| Package Type | D | 
| Industry STD Term | SOIC | 
| JEDEC Code | R-PDSO-G | 
| Package QTY | 2500 | 
| Carrier | LARGE T&R | 
| Device Marking | UCC27714 | 
| Width (mm) | 3.91 | 
| Length (mm) | 8.65 | 
| Thickness (mm) | 1.58 | 
| Pitch (mm) | 1.27 | 
| Max Height (mm) | 1.75 | 
| Mechanical Data | 下载 | 
参数化
| Bus Voltage | 600 V | 
| Channel Input Logic | Non-Inverting | 
| Fall Time | 15 ns | 
| Input Threshold | TTL,CMOS | 
| Input VCC(Max) | 18 V | 
| Input VCC(Min) | 10 V | 
| Iq | 300 uA | 
| Negative Voltage Handling at HS Pin | -8 V | 
| Number of Channels | 2 | 
| Operating Temperature Range | -40 to 125 C | 
| Package Group | SOIC | 
| Peak Output Current | 4 A | 
| Power Switch | MOSFET,IGBT | 
| Prop Delay | 90 ns | 
| Rating | Catalog | 
| Rise Time | 15 ns | 
| Special Features | N/A | 
生态计划
| RoHS | Compliant | 
设计套件和评估模块
- Evaluation Modules & Boards: UCC27714EVM-551
UCC27714 600W Phase Shifted Full Bridge Converter Evaluation Module
Lifecycle Status: Active (Recommended for new designs) - Evaluation Modules & Boards: UCC29950EVM-631
UCC29950EVM-631 300-W PFC/LLC Off-Line AC/DC PSU Module EVM
Lifecycle Status: Active (Recommended for new designs) 
模型线
系列: UCC27714 (2)
- UCC27714D UCC27714DR
 
制造商分类
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver