Datasheet Texas Instruments CSD25404Q3 — 数据表

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SLPS570 – NOVEMBER 2015 CSD25404Q3 –20 V P-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Low RDS(on)
Halogen Free
RoHS Compliant
Pb Free Terminal Plating
SON 3.3 mm × 3.3 mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-source voltage –20 V Qg Gate charge total (–4.5 V) 10.9 nC Qgd Gate charge gate to drain RDS(on)
Vth DEVICE QTY CSD25404Q3 mΩ VGS = –2.5 V 10.1 mΩ VGS = –4.5 V 5.5 mΩ –0.9 MEDIA 2500 13-Inch Reel CSD25404Q3T V 250 7-Inch Reel PACKAGE SHIP SON 3.3 mm × 3.3
mm Plastic Package Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. This –20 V, 5.5 mΩ NexFET™ power MOSFET is
designed to minimize losses in power conversion load
management applications with a SON 3.3 mm Г— 3.3
mm package that offers an excellent thermal
performance for the size of the device. Absolute Maximum Ratings
TA = 25В°C VALUE UNIT VDS Drain-to-source voltage –20 V VGS Gate-to-source voltage В±12 V Continuous drain current, TC = 25В°C –104 Continuous drain current (package limit) –60 Continuous drain current(1) –18 Pulsed drain current(2) –240 ID Top View …