Datasheet Texas Instruments CSD85302L — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD85302L |
| 零件号 | CSD85302L |
20 V双N沟道NexFET功率MOSFET 4-PICOSTAR -55至150
数据表
CSD85302L 20 V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 413 Kb, 档案已发布: Nov 19, 2015
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状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 4 |
| Package Type | YME |
| Package QTY | 3000 |
| Carrier | LARGE T&R |
| Device Marking | 85302 |
| Width (mm) | 1.35 |
| Length (mm) | 1.35 |
| Thickness (mm) | .2 |
| Mechanical Data | 下载 |
参数化
| Configuration | Dual Common Drain |
| IDM, Max Pulsed Drain Current(Max) | 37 A |
| Package | LGA 1.35x1.35 mm |
| QG Typ | 6.0 nC |
| QGD Typ | 1.4 nC |
| RDS(on) Typ at VGS=4.5V | 20 mOhm |
| Rds(on) Max at VGS=4.5V | 24 mOhms |
| VDS | 20 V |
| VGS | 10 V |
| VGSTH Typ | 0.90 V |
生态计划
| RoHS | Compliant |
模型线
系列: CSD85302L (2)
- CSD85302L CSD85302LT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor