Datasheet Texas Instruments CSD85301Q2 — 数据表
制造商 | Texas Instruments |
系列 | CSD85301Q2 |
零件号 | CSD85301Q2 |
CSD85301Q2双N沟道NexFET™功率MOSFET 6-WSON
数据表
CSD85301Q2 20 V Dual N-Channel NexFET Power MOSFETs datasheet
PDF, 1.2 Mb, 档案已发布: Dec 17, 2014
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价格
状态
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
打包
Pin | 6 |
Package Type | DQK |
Package QTY | 3000 |
Carrier | LARGE T&R |
Device Marking | 8531 |
Width (mm) | 2 |
Length (mm) | 2 |
Thickness (mm) | .75 |
Mechanical Data | 下载 |
参数化
Configuration | Dual |
IDM, Max Pulsed Drain Current(Max) | 26 A |
Package | SON2x2 mm |
QG Typ | 4.2 nC |
QGD Typ | 1 nC |
RDS(on) Typ at VGS=4.5V | 23 mOhm |
Rds(on) Max at VGS=4.5V | 27 mOhms |
VDS | 20 V |
VGS | 10 V |
VGSTH Typ | 0.9 V |
生态计划
RoHS | Compliant |
模型线
系列: CSD85301Q2 (2)
- CSD85301Q2 CSD85301Q2T
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor