Datasheet Rohm RB851YT2R — 数据表

RB851Y
Diodes Schottky barrier diode
RB851Y
Applications High frequency detection Dimensions (Unit : mm) Land size figure (Unit : mm)
0.5
0.22±0.05 0.13±0.05 (3) Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency. 0.45 1.6±0.1 1.6±0.05 (4) 1.2±0.1 1.6±0.1 1.6±0.05 1.0
00.1 EMD4 (1) (2) 0.5 0.5±0.05 Construction Silicon epitaxial planar 0.5 1.0±0.1 Structure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 1.5±0.1 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.55
0.8±0.1 00.1 0.65±0.1 1.65±0.1 1.7±0.05 1PIN 4.0±0.1 Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (DC) Forward current(DC)(*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VR IF Tj Tstg Limits 3 30 125 -40 to +125 Unit V mA Electrical characteristics (Ta=25°C)
Param eter Forward voltage Revers e current Capacitance between term inal Sym bol VF IR Ct Min. Typ. 0.8 Max. 0.46 0.7 Unit V µA pF IF =1m A VR =1V VR =0V , f=1MHz Conditions Rev.B 1.65±0.01 1/2 RB851Y
Diodes
Electrical characteristic curves (Ta=25°C)
10 FORWARD CURRENT:IF(mA) 1 Ta=125 10000 Ta=125 1000 Ta=75 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 f=1MHz REVERSE CURRENT:IR(uA) 0.1 0.01 Ta=-25 Ta=25 Ta=75 Ta=25 Ta=-25 0.001 0.0001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 10 1 0 1 2 3 4 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 5 0.1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 5 410 FORWARD VOLTAGE:VF(mV) 400 390 380 370 AVE:389.3mV 360 VF DISPERSION MAP REVERSE CURRENT:IR(uA) Ta=25 IF=1mA n=30pcs 40 Ta=25 VR=1V n=30pcs 0.8 Ta=25 f=1MHz VR=0V n=10pcs 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.75 20 0.7 AVE:0.764pF 10 AVE:15.0uA 0 IR DISPERSION MAP 0.65 Ct DISPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Rth(j-a) 1.4 1.2 1 0.8 0.6 0.4 0.2 0
1000 C=200pF R=0 C=100pF R=1.5k AVE:0.53kV AVE:1.13kV Rth(j-c) 100 Mounted on epoxy board
IM=1mA IF=10mA 1ms time 10 0.001 300us 0.01 1 100 TIME:t(s) 10 Rth-t CHARACTERISTICS 0.1 ESD DISPERSION MAP Rev.B 2/2 Appendix Notes
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