Datasheet BUK969R3-100E - NXP MOSFET, N-CH, 100 V, 100 A, D2PAK — 数据表

NXP BUK969R3-100E

Part Number: BUK969R3-100E

详细说明

Manufacturer: NXP

Description: MOSFET, N-CH, 100 V, 100 A, D2PAK

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Docket:
BUK969R3-100E
5 October 2012
N-channel TrenchMOS logic level FET
Product data sheet
1.

Product profile

Specifications:

  • Continuous Drain Current Id: 100 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 3
  • On Resistance Rds(on): 7490µ Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 263 W
  • Rds(on) Test Voltage Vgs: 5 V
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (18-Jun-2012)

其他名称:

BUK969R3100E, BUK969R3 100E