Datasheet IPP320N20N3 G - Infineon MOSFET, N-CH, 200 V, 34 A, TO220-3 — 数据表
Part Number: IPP320N20N3 G
详细说明
Manufacturer: Infineon
Description: MOSFET, N-CH, 200 V, 34 A, TO220-3
Docket:
IPB320N20N3 G
IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 200 32 34 V m A
Specifications:
- Continuous Drain Current Id: 34 A
- Drain Source Voltage Vds: 200 V
- Number of Pins: 3
- On Resistance Rds(on): 0.028 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 136 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- RoHS: Yes