Datasheet IPP110N20N3 G - Infineon MOSFET, N-CH, 200 V, 88 A, TO220-3 — 数据表
Part Number: IPP110N20N3 G
详细说明
Manufacturer: Infineon
Description: MOSFET, N-CH, 200 V, 88 A, TO220-3
Docket:
IPB107N20N3 G
IPP110N20N3 G IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max (TO263) ID 200 10.7 88 V mW A
Specifications:
- Continuous Drain Current Id: 88 A
- Drain Source Voltage Vds: 200 V
- Number of Pins: 3
- On Resistance Rds(on): 0.0099 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 300 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- RoHS: Yes