Datasheet BSO615N G - Infineon MOSFET DUA, L N-CH 60 V, 2.6 A, 8SOIC — 数据表

Infineon BSO615N G

Part Number: BSO615N G

详细说明

Manufacturer: Infineon

Description: MOSFET DUA, L N-CH 60 V, 2.6 A, 8SOIC

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Docket:
G
° Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Marking
615N

Specifications:

  • Continuous Drain Current Id: 2.6 A
  • Drain Source Voltage Vds: 60 V
  • MSL: MSL 3 - 168 hours
  • Number of Pins: 8
  • On Resistance Rds(on): 0.12 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 2 W
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 1.6 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: Dual N Channel
  • RoHS: Yes