Datasheet 2SK3666-3-TB-E - Sanyo JFET, N CH, 30 V, 0.01 A, SOT23 — 数据表

Sanyo 2SK3666-3-TB-E

Part Number: 2SK3666-3-TB-E

详细说明

Manufacturer: Sanyo

Description: JFET, N CH, 30 V, 0.01 A, SOT23

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Specifications:

  • Breakdown Voltage Vbr: 30 V
  • Current Idss Max: 6 mA
  • Current Idss Min: 600 µA
  • Drain Source Voltage Vds: 30 V
  • Gate-Source Cutoff Voltage Vgs(off) Max: 2.2 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • Package / Case: CP
  • Power Dissipation: 200 mW
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: JFET
  • Zero Gate Voltage Drain Current Idss: 600 µA to 6 mA

RoHS: Yes

其他名称:

2SK36663TBE, 2SK3666 3 TB E