Datasheet PMDT670UPE - NXP MOSFET, P CH, DUAL, 20 V, 550 mA, SOT666 — 数据表

NXP PMDT670UPE

Part Number: PMDT670UPE

详细说明

Manufacturer: NXP

Description: MOSFET, P CH, DUAL, 20 V, 550 mA, SOT666

data sheetDownload Data Sheet

Docket:
SO T6
PMDT670UPE
20 V, 550 mA dual P-channel Trench MOSFET
Rev.

1 -- 13 September 2011 Product data sheet
1. Product profile

Specifications:

  • Continuous Drain Current Id: -550 mA
  • Drain Source Voltage Vds: -20 V
  • Number of Pins: 6
  • On Resistance Rds(on): 0.67 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 500 mW
  • Rds(on) Test Voltage Vgs: -4.5 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: -800 mV
  • Transistor Case Style: SOT-666
  • Transistor Polarity: Dual P Channel

RoHS: Yes