Datasheet PMGD290XN - NXP MOSFET, NN CH, 20 V, 0.86 A, SOT363 — 数据表

NXP PMGD290XN

Part Number: PMGD290XN

详细说明

Manufacturer: NXP

Description: MOSFET, NN CH, 20 V, 0.86 A, SOT363

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Docket:
PMGD290XN
Dual N-channel µTrenchMOSTM extremely low level FET
MBD128
Rev.

01 -- 26 February 2004
Product data

Specifications:

  • Continuous Drain Current Id: 860 mA
  • Drain Source Voltage Vds: 20 V
  • Module Configuration: Dual N Channel
  • Number of Pins: 6
  • On Resistance Rds(on): 0.29 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 410 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOT-363
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

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  • Fairchild - FDV305N