Datasheet DMS3016SSSA - Diodes MOSFET, N CH, W DIODE, 30 V, 9.8 A, SO8 — 数据表

Diodes DMS3016SSSA

Part Number: DMS3016SSSA

详细说明

Manufacturer: Diodes

Description: MOSFET, N CH, W DIODE, 30 V, 9.8 A, SO8

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Docket:
DMS3016SSSA
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
· DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: · Low RDS(ON) - minimizes conduction losses · Ultra Low VSD ­ enhanced to reduce losses due to body diode conduction · Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses · Low gate capacitance (Qg/Qgs) ratio ­ reduces risk of shootthrough or cross conduction currents at high frequencies · Avalanche rugged ­ IAR and EAR rated Lead Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

  • Continuous Drain Current Id: 9.8 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.009 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1.54 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (20-Jun-2011)
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes