Datasheet SI4908DY-T1-GE3 - Vishay MOSFET, NN CH, DIODE, 40 V, 5 A, 8-SOIC — 数据表

Vishay SI4908DY-T1-GE3

Part Number: SI4908DY-T1-GE3

详细说明

Manufacturer: Vishay

Description: MOSFET, NN CH, DIODE, 40 V, 5 A, 8-SOIC

data sheetDownload Data Sheet

Docket:
Si4908DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V ID (A)a 5.0 5.6 4.7 Qg (Typ.)

Specifications:

  • Current Id Max: 4.1 A
  • Drain Source Voltage Vds: 40 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.048 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 1.85 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.2 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Vishay - SI4840BDY-T1-E3

其他名称:

SI4908DYT1GE3, SI4908DY T1 GE3