Datasheet PIC10F200, PIC10F202, PIC10F204, PIC10F206 (Microchip) - 59
| 制造商 | Microchip |
| 描述 | 6-Pin, 8-Bit Flash Microcontrollers |
| 页数 / 页 | 88 / 59 — PIC10F200/202/204/206. 12.1 DC Characteristics: PIC10F200/202/204/206 … |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
PIC10F200/202/204/206. 12.1 DC Characteristics: PIC10F200/202/204/206 (Industrial)
该数据表的模型线
- PIC10F200-E/MC PIC10F200-E/OT PIC10F200-E/P PIC10F200-I/MC PIC10F200-I/OT PIC10F200-I/P PIC10F200T-E/OT PIC10F200T-E/OTVAO PIC10F200T-I/MC PIC10F200T-I/OT PIC10F200T-I/OTVAO
- PIC10F202-E/MC PIC10F202-E/OT PIC10F202-E/P PIC10F202-I/MC PIC10F202-I/OT PIC10F202-I/P PIC10F202T-E/OT PIC10F202T-E/OTVAO PIC10F202T-I/MC PIC10F202T-I/OT PIC10F202T-I/OTVAO
文件文字版本
PIC10F200/202/204/206
12.1 DC Characteristics: PIC10F200/202/204/206 (Industrial)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C TA +85°C (industrial) DC CHARACTERISTICS
Param.
Sym.
No. Characteristic Min. Typ.(1) Max. Units Conditions D001 VDD Supply Voltage 2.0 5.5 V See Figure 12-1 D002 VDR RAM Data Retention Voltage(2) 1.5* — — V Device in Sleep mode D003 VPOR VDD Start Voltage
to ensure Power-on Reset — Vss — V D004 SVDD VDD Rise Rate
to ensure Power-on Reset 0.05* — — V/ms IDD Supply Current(3)
—
— 175
0.63 275
1.1 A
mA VDD = 2.0V
VDD = 5.0V —
— 0.1
0.35 1.2
2.4 A
A VDD = 2.0V
VDD = 5.0V —
— 1.0
7 3
16 A
A VDD = 2.0V
VDD = 5.0V —
— 12
44 23
80 A
A VDD = 2.0V
VDD = 5.0V — 85
175 115
195 A
A VDD = 2.0V
VDD = 5.0V D010
IPD Power-down Current(4) D020
IWDT WDT Current(5) D022
ICMP Comparator Current(5) D023
IVREF Internal Reference Current(5,6) D024
*
Note 1:
2:
3: 4:
5:
6: These parameters are characterized but not tested.
Data in the Typical (“Typ.”) column is based on characterization results at 25C. This data is for design
guidance only and is not tested.
This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, bus rate, internal code execution pattern and temperature also have an impact on the current
consumption.
a) The test conditions for all IDD measurements in active operation mode are:
All I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
mode.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state
and tied to VDD or VSS.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled.
Measured with the comparator enabled. 2004-2014 Microchip Technology Inc. DS40001239F-page 59
12.1 DC Characteristics: PIC10F200/202/204/206 (Industrial)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40°C TA +85°C (industrial) DC CHARACTERISTICS
Param.
Sym.
No. Characteristic Min. Typ.(1) Max. Units Conditions D001 VDD Supply Voltage 2.0 5.5 V See Figure 12-1 D002 VDR RAM Data Retention Voltage(2) 1.5* — — V Device in Sleep mode D003 VPOR VDD Start Voltage
to ensure Power-on Reset — Vss — V D004 SVDD VDD Rise Rate
to ensure Power-on Reset 0.05* — — V/ms IDD Supply Current(3)
—
— 175
0.63 275
1.1 A
mA VDD = 2.0V
VDD = 5.0V —
— 0.1
0.35 1.2
2.4 A
A VDD = 2.0V
VDD = 5.0V —
— 1.0
7 3
16 A
A VDD = 2.0V
VDD = 5.0V —
— 12
44 23
80 A
A VDD = 2.0V
VDD = 5.0V — 85
175 115
195 A
A VDD = 2.0V
VDD = 5.0V D010
IPD Power-down Current(4) D020
IWDT WDT Current(5) D022
ICMP Comparator Current(5) D023
IVREF Internal Reference Current(5,6) D024
*
Note 1:
2:
3: 4:
5:
6: These parameters are characterized but not tested.
Data in the Typical (“Typ.”) column is based on characterization results at 25C. This data is for design
guidance only and is not tested.
This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, bus rate, internal code execution pattern and temperature also have an impact on the current
consumption.
a) The test conditions for all IDD measurements in active operation mode are:
All I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
mode.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state
and tied to VDD or VSS.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled.
Measured with the comparator enabled. 2004-2014 Microchip Technology Inc. DS40001239F-page 59