Datasheet BF998, BF998R - 3

link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage  12 V ID drain current  30 mA IG1 gate 1 current  10 mA IG2 gate 2 current  10 mA Ptot total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1  200 mW up to Tamb = 50 C; see Fig.3; note 2  200 mW Ptot total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1  200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature  150 C
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm. 2. Device mounted on a printed-circuit board. MLA198 MGA002 handbook, halfpage handbook, halfpage 200 200 P (2) (1) P tot max tot max (mW) (mW) 100 100 0 0 0 100 200 0 100 200 T T amb ( C) o amb (°C) (1) Ceramic substrate. (2) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug 01 3 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers