Datasheet IRF5305 - 3

描述HEXFET Power MOSFET
页数 / 页9 / 3 — VGS. TO P - 15V. TOP - 15V. - 10V. - 10V - 8.0V. - 8.0V - 7.0V. - 7.0V. - …
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VGS. TO P - 15V. TOP - 15V. - 10V. - 10V - 8.0V. - 8.0V - 7.0V. - 7.0V. - 6.0V. - 5.5V. - 5.0V. BOT TOM - 4.5V. BOTTOM - 4.5V. Fig 1. Fig 2. Fig 3

VGS TO P - 15V TOP - 15V - 10V - 10V - 8.0V - 8.0V - 7.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V BOTTOM - 4.5V Fig 1 Fig 2 Fig 3

文件文字版本

IRF5305 1 0 0 0 1 0 0 0
VGS VGS TO P - 15V TOP - 15V - 10V - 10V - 8.0V
)
- 8.0V - 7.0V
)
- 7.0V - 6.0V - 6.0V
t (A
- 5.5V
t (A
- 5.5V
n
- 5.0V
n
- 5.0V BOT TOM - 4.5V BOTTOM - 4.5V
rre rre u 1 0 0 u 100 C C e e rc rc u u o o -S -S -to -to in 1 0 in 1 0 ra ra D D -4 .5 V , D -4.5 V , D -I -I 2 0µ s P U LS E W ID T H 20 µ s P U L S E W ID T H T cJ = 2 5°C T = J 17 5°C C 1 A 1 A 0 . 1 1 1 0 1 0 0 0.1 1 1 0 1 0 0 - D V S , D rain-to-S ourc e V olta ge (V ) - D V S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1 0 0 2 . 0 e I = D -27 A c ) n ta t (A is T = J 2 5°C n s e 1 . 5 T J = 1 7 5 °C rre R u n C O e e ) d rc rc e u u 1 0 o liz o 1 . 0 -S a -S rm -to o -to in in (N ra ra 0 . 5 , D D , D -I (on) S V = DS -2 5 V D 2 0µ s P U L S E W ID TH R V G S = -1 0 V 1 A 0 . 0 A 4 5 6 7 8 9 1 0 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 -V G S , G ate -to-Source Volta ge (V ) T , Junction T em perature (°C ) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3