Datasheet JX3S0080120M (JX Semiconductor) - 6
| 制造商 | JX Semiconductor |
| 描述 | 1200V N-Channel MOSFET in TO-247 package |
| 页数 / 页 | 7 / 6 — JX3S0080120M. Fig13. Switching Energy vs. Drain Current. Fig14. Switching … |
| 文件格式/大小 | PDF / 689 Kb |
| 文件语言 | 英语 |
JX3S0080120M. Fig13. Switching Energy vs. Drain Current. Fig14. Switching Energy vs. RG(ext). VGS=-5/+20 V. VDS = 800V. L=150uH
该数据表的模型线
文件文字版本
JX3S0080120M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
3 1.6
VGS=-5/+20 V VGS=-5/+20 V
1.4
VDS = 800V
2.5
VDS = 800V L=150uH L=150uH RG(ext)=2.5Ω
Etotal
RG(ext)=2.5Ω
1.2 2 Eto tal 1 o E n 1.5 0.8 Eon 1 0.6 0.4 0.5 Eoff Eoff 0.2 0 0 0 10 20 30 40 0 5 10 15 20 25
Drain to Source Current, IDS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
90 1.4 80 1.2 tdon 70 E 1 total 60 Eon tdoff 0.8 50 0.6 40 tr 30 0.4 tf 20 0.2 Eoff 10 0 0 20 40 60 80 100 120 140 160 180 0 0 5 10 15 20 25
Junction Temperature, TJ ( C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
100 0.5 10 1us 0.3 10us 100us 0.1 1 1ms 0.05 100ms 0.02 0.1 0.01 SinglePulse 0.01 0.1 1 10 100 1000
Drain-Source Voltage, VDS (V)
Time, tp (s) 6 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
3 1.6
VGS=-5/+20 V VGS=-5/+20 V
1.4
VDS = 800V
2.5
VDS = 800V L=150uH L=150uH RG(ext)=2.5Ω
Etotal
RG(ext)=2.5Ω
1.2 2 Eto tal 1 o E n 1.5 0.8 Eon 1 0.6 0.4 0.5 Eoff Eoff 0.2 0 0 0 10 20 30 40 0 5 10 15 20 25
Drain to Source Current, IDS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
90 1.4 80 1.2 tdon 70 E 1 total 60 Eon tdoff 0.8 50 0.6 40 tr 30 0.4 tf 20 0.2 Eoff 10 0 0 20 40 60 80 100 120 140 160 180 0 0 5 10 15 20 25
Junction Temperature, TJ ( C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
100 0.5 10 1us 0.3 10us 100us 0.1 1 1ms 0.05 100ms 0.02 0.1 0.01 SinglePulse 0.01 0.1 1 10 100 1000
Drain-Source Voltage, VDS (V)
Time, tp (s) 6 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area