Datasheet JX4S0020120M (JX Semiconductor) - 5
| 制造商 | JX Semiconductor |
| 描述 | 1200V N-Channel SiC MOSFET in TO-247 package |
| 页数 / 页 | 7 / 5 — JX4S0020120M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge … |
| 文件格式/大小 | PDF / 636 Kb |
| 文件语言 | 英语 |
JX4S0020120M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge Characteristics. Junction Temperature TJ ( C)
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JX4S0020120M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
4 20 3.5 15 3 2.5 10 2 1.5 5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-8 -6 -4 -2 0 0 200 180 -50 160 VG S=0V 140 VGS=15 V -100 120 100 VGS=1 8V -150 80 60 V GS=20V -200 40 20 0 -250
Drain-Source Voltage VDS (V)
0 200 400 600 800 1000 1200
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
100000 600 10000 C 500 ISS 400 1000 COSS 300 100 200 10 CRSS 100 1 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
4 20 3.5 15 3 2.5 10 2 1.5 5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-8 -6 -4 -2 0 0 200 180 -50 160 VG S=0V 140 VGS=15 V -100 120 100 VGS=1 8V -150 80 60 V GS=20V -200 40 20 0 -250
Drain-Source Voltage VDS (V)
0 200 400 600 800 1000 1200
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
100000 600 10000 C 500 ISS 400 1000 COSS 300 100 200 10 CRSS 100 1 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area