Datasheet JX3S0040090M (JX Semiconductor) - 4

JX3S0040090M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C)
120 120 VGS=20V VGS =20V 100 VGS=18V 100 VG S =18V 80 VGS 80 VGS= 1 6 V =16V 60 60 V G S = 1 2 V 40 VGS=12V 40 VG S=8V 20 20 VGS=8V 0 0 0 2 4 6 8 10 12
Drain- Source Voltage, VDS (V)
0 2 4 6 8 10 12
Drain- Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
1.6 120 1.4 20V 30A 100 1.2 1 80 VGS=15V ID= 30A 0.8 60 0.6 VGS=18V ID= 30A 0.4 40 VGS=20V ID= 30A 0.2 20 0 -50 -25 0 25 50 75 100 125 150 175 0
Junction Temperature TJ
℃ -50 -25 0 25 50 75 100 125 150 Junction Temperature ，Tj (℃)
Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
100 -10 -8 -6 -4 -2 0 90 0 80 V -10 GS=-5V -20 70 -30 60 TJ=2 5℃ VGS=-3V -40 50 -50 40 TJ=-40℃ VGS=0V -60 30 TJ= 15 0 ℃ -70 20 -80 10 -90 0 0 2 4 6 8 10 12 -100 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V) 4 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area