Datasheet TIP35C, TIP36C (STMicroelectronics) - 3

TIP35C - TIP36C Electrical characteristics 2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector cut-off current ICEO V (I CE = 60 V 1 mA B = 0) Emitter cut-off current IEBO V (I EB = 5 V 1 mA C = 0) Collector cut-off current ICES V (V CE = 100 V 0.7 mA BE = 0) Collector-emitter V (1) sustaining voltage I CEO(sus) C = 30 mA 100 V (IB = 0) IC = 15 A __ IB = 1.5 A 1.8 V V (1) Collector-emitter CE(sat) saturation voltage IC = 25 A _ IB = 5 A 4 V IC = 15 A __ VCE = 4 V 2 V V (1) BE(on) Base-emitter voltage IC = 25 A _ VCE = 4 V 4 V IC = 1.5 A_ VCE = 4 V 25 h (1) FE DC current gain IC = 15 A __ VCE = 4 V 10 50 I f C = 1 A_ VCE = 10 V T Transition frequency 3 MHz f = 1 MHz 1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%. For PNP type voltage and current are negative. 3/9 Document Outline Figure 1. Internal schematic diagrams Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Electrical characteristics 2.1 Electrical characteristic (curves) Figure 2. DC current gain for NPN type Figure 3. DC current gain for PNP type Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type Figure 6. Collector-emitter saturation voltage for NPN type Figure 7. Collector-emitter saturation voltage for PNP type Figure 8. Base-emitter saturation voltage for NPN type Figure 9. Base-emitter saturation voltage for PNP type Figure 10. Base-emitter on voltage for NPN type Figure 11. Base-emitter on voltage for PNP type 3 Package mechanical data 4 Revision history Table 5. Document revision history