Datasheet Si7850DP (Vishay) - 4

制造商Vishay
描述N-Channel 60 V (D-S) Fast Switching MOSFET in PowerPAK SO-8 package
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Si7850DP. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Threshold Voltage

Si7850DP TYPICAL CHARACTERISTICS On-Resistance vs Junction Temperature Threshold Voltage

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Si7850DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2.0 0.4 1.8 VGS = 10 V ed) 0.2 ID = 10.3 A I maliz D = 250 µA 1.6 0.0 (Nor 1.4 -0.2 riance (V) a V 1.2 -0.4 GS(th) On-Resistance V 1.0 - -0.6 DS(on) 0.8 R -0.8 0.6 -1.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) TJ - Temperature (°C)
On-Resistance vs. Junction Temperature Threshold Voltage
0.06 100 0.05 ) 80 ( 0.04 ID = 10.3 A 60 esistance 0.03 -R er (W) w o - On P 40 0.02 DS(on)R 20 0.01 0.00 0 0 2 4 6 8 10 0.01 0.1 1 10 100 600 V Time (s) GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power
S09-0227-Rev. E, 09-Feb-09
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