Datasheet TDS5B212MX (Toshiba) - 8

TDS5B212MX,TDS5C212MX 12.3. Switching Characteristics (Unless otherwise specified, Ta = 25 �) 12.3.1. TDS5B212MX Characteristics Symbol Note Test Condition VCC (V) Typ. Unit Propagation delay time tPLH/tPHL (Note 1) RL = 50 Ω, f = 16 GHz 3.3 26 ps See Fig. 13.1, 13.7 Output skew (bit to bit) tSK(b) (Note 1) RL = 50 Ω, f = 1 GHz 3.3 2 ps See Fig. 13.1, 13.8 Output skew (channel to channel) tSK(CH) (Note 1) RL = 50 Ω, f = 16 GHz 3.3 2 ps See Fig. 13.1, 13.7 Note 1: Parameter guaranteed by design. 12.3.2. TDS5C212MX Characteristics Symbol Note Test Condition VCC (V) Typ. Unit Propagation delay time tPLH/tPHL (Note 1) RL = 50 Ω, f = 16 GHz 3.3 26 ps See Fig. 13.1, 13.7 Output skew (bit to bit) tSK(b) (Note 1) RL = 50 Ω, f = 1 GHz 3.3 3 ps See Fig. 13.1, 13.8 Output skew (channel to channel) tSK(CH) (Note 1) RL = 50 Ω, f = 16 GHz 3.3 2 ps See Fig. 13.1, 13.7 Note 1: Parameter guaranteed by design. 12.4. Timing characteristics 12.4.1. Timing characteristics (Unless otherwise specified, Ta = -40 to 85 �) Characteristics Symbol Test Condition VCC (V) Min Typ. Max Unit Start-up time. tsup RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 100 µs See Fig. 13.5 Turn-ON time (SEL to Output) ton RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 400 ns Turn-ON time (OE to Output) See Fig. 13.5 1.65 to 3.6 � � 400 Turn-OFF time (SEL to Output) toff RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 100 ns Turn-OFF time (OE to Output) See Fig. 13.5 1.65 to 3.6 � � 100 Break before make TBBM RL = 50 Ω, CL = 5 pF 1.65 to 3.6 55 � 400 ns See Fig. 13.6 12.4.2. Timing characteristics (Unless otherwise specified, Ta = -40 to 125 �) Characteristics Symbol Test Condition VCC (V) Min Typ. Max Unit Start-up time. tsup RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 110 µs See Fig. 13.5 Turn-ON time (SEL to Output) ton RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 450 ns Turn-ON time (OE to Output) See Fig. 13.5 1.65 to 3.6 � � 450 Turn-OFF time (SEL to Output) toff RL = 50 Ω, CL = 5 pF 1.65 to 3.6 � � 110 ns Turn-OFF time (OE to Output) See Fig. 13.5 1.65 to 3.6 � � 110 Break before make TBBM RL = 50 Ω, CL = 5 pF 1.65 to 3.6 55 � 450 ns See Fig. 13.6 ©2026 8 Toshiba Electronic Devices & Storage Corporation 2026-04-21 Rev.1.0.A