Datasheet TDS5B212MX (Toshiba) - 4

TDS5B212MX,TDS5C212MX 10. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 4.0 V Input voltage (OE, SEL) VIN -0.5 to 4.0 V Switch I/O voltage VS -0.5 to 2.5 V Switch I/O current IS 32 mA Power dissipation PD (Note 1) 180 mW VCC/ground current ICC/IGND ±50 mA Storage temperature Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 180 mW in the range of Ta = -40 to 105 �. From Ta = 105 to 125 � a derating factor of -8.5 mW/� shall be applied until 10 mW. 11. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 1.6 to 3.6 V Input voltage (OE, SEL) VIN 0 to 3.6 V Signal pins differential voltage. VI/O(Diff) 0 to 1.8 V Signal pins common mode voltage. VI/O(Com) 0 to 2.0 V Operating temperature Topr -40 to 125 � Input rise and fall times dt/dv 0 to 10 ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. ©2026 4 Toshiba Electronic Devices & Storage Corporation 2026-04-21 Rev.1.0.A