Datasheet 2SB649 (Unisonic Technologies) - 6

2SB649/A PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS
Typical Output Characteristecs Typical Transfer Characteristics 1.0 -500 V -4.0 -5.5 CE=-5V -5.0 -3.5 0.8 -4.5 -3.0 (A) P -100 (mA) C -2.5 D =20W C nt, I 0.6 -2.0 t, I -1.5 urren r Curre 0.4 a=75°С cto -1.0 -10 T 25°С -25°С olle llector C C 0.2 -0.5mA Co IB=0 TC=25°С -1 0 -10 -20 -30 -40 -50 0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector to Emitter Voltage, VCE (V) Base to Emitter Voltage, VBE (V) DC Current Transfer Ratio vs. Collector to Emitter Saturation Collector Current Voltage vs. Collector Current 350 -1.2 VCE=-5V IC=10 IB 300 Ta=75°С tion -1.0 atio, h FE 250 ura (V) 25°С r R -0.8 fe r Sat 200 te (SAT) E C -0.6 -25°С V 150 Emit e, to ltag -0.4 or 100 Vo 25°С ollect -0.2 T =75°С C DC Current Trans 50 C С -25° 1 0 -1 -10 -100 -1,000 -1 -10 -100 -1,000 Collector Current, IC (mA) Collector Current, IC (mA) Base to Emitter Saturation Voltage Gain Bandwidth Product vs. Collector Current vs. Collector Current -1.2 -240 , VCE=5V ge I Ta=25°С C=10IB -1.0 -200 olta (MHz) T n V T =-25°С C -0.8 tio ) -160 V uct, f ( 25°С ura )-0.6 75°С Sat -120 r th Prod te V BE(SAT-0.4 wid -80 Emit to Band -0.2 se -40 Ba Gain 0 0 -1 -3 -10 -30 -100 -300 -1000 -10 -30 -100 -300 -1000 Collector Current, IC (mA) Collector Current, IC (mA)
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