Datasheet SS32 - SS320 (Taiwan Semiconductor) - 5
| 制造商 | Taiwan Semiconductor |
| 描述 | 3A, 100V Schottky Barrier Surface Mount Rectifier in DO-214AB (SMC) package |
| 页数 / 页 | 8 / 5 — SS32 – SS320. CHARACTERISTICS CURVES. Fig.7 Typical Reverse … |
| 文件格式/大小 | PDF / 552 Kb |
| 文件语言 | 英语 |
SS32 – SS320. CHARACTERISTICS CURVES. Fig.7 Typical Reverse Characteristics. Fig.8 Typical Forward Characteristics. SS39-310
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文件文字版本
SS32 – SS320
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics
) A) 1000 A 10 μ ( T =150°C ( J
SS39-310 SS39-310
NT NT E E 100 RR T =150°C RR J T =125°C CU 10 J E D CU T =125°C R J RS A T =100°C E J ) V 1 1 T =100°C A( ORW J RE F T =25°C J 0.1 OUS OUS NE NE T =-55°C J A A T 0.01 T N N Pulse width 300μs A A T T =25°C J T 1% duty cycle 0.001 INS 0.1 INS 10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics
A) 10000 ) 10 μ A (
SS315-320
( T =150°C
SS315-320
J NT 1000 NT E E T =150°C J RR RR 100 CU E T =125°C D CU R RS 10 T =100°C J J T =125°C A J E V 1 T =100°C ) J A ( RE 1 ORW F T =25°C J OUS 0.1 OUS NE NE A T A T =-55°C N 0.01 J T N Pulse width 300μs A T T =25°C J A 1% duty cycle T 0.001 INS 0.1 10 20 30 40 50 60 70 80 90 100 INS 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.11 Typical Forward Power Dissipation vs. Fig.12 Typical Forward Power Dissipation vs. Forward Current Forward Current
1.2 1.6
SS32-34
δ = 1
SS35-36
1.4 δ = 1 1.0 ) W( 1.2 ) N W 0.8 ( IO T 1.0 N δ = 0.5 A δ = 0.5 IO T 0.6 IP S 0.8 A IP δ = 0.2 δ = 0.2 S 0.6 0.4 T =125°C R DIS T =150°C J J δ = 0.1 δ = 0.1 R DIS 0.4 OWE 0.2 P 0.2 OWE P 0.0 0.0 0 1 2 3 0 1 2 3 FORWARD CURRENT (A) FORWARD CURRENT (A) 5 Version: Q2412
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics
) A) 1000 A 10 μ ( T =150°C ( J
SS39-310 SS39-310
NT NT E E 100 RR T =150°C RR J T =125°C CU 10 J E D CU T =125°C R J RS A T =100°C E J ) V 1 1 T =100°C A( ORW J RE F T =25°C J 0.1 OUS OUS NE NE T =-55°C J A A T 0.01 T N N Pulse width 300μs A A T T =25°C J T 1% duty cycle 0.001 INS 0.1 INS 10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics
A) 10000 ) 10 μ A (
SS315-320
( T =150°C
SS315-320
J NT 1000 NT E E T =150°C J RR RR 100 CU E T =125°C D CU R RS 10 T =100°C J J T =125°C A J E V 1 T =100°C ) J A ( RE 1 ORW F T =25°C J OUS 0.1 OUS NE NE A T A T =-55°C N 0.01 J T N Pulse width 300μs A T T =25°C J A 1% duty cycle T 0.001 INS 0.1 10 20 30 40 50 60 70 80 90 100 INS 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.11 Typical Forward Power Dissipation vs. Fig.12 Typical Forward Power Dissipation vs. Forward Current Forward Current
1.2 1.6
SS32-34
δ = 1
SS35-36
1.4 δ = 1 1.0 ) W( 1.2 ) N W 0.8 ( IO T 1.0 N δ = 0.5 A δ = 0.5 IO T 0.6 IP S 0.8 A IP δ = 0.2 δ = 0.2 S 0.6 0.4 T =125°C R DIS T =150°C J J δ = 0.1 δ = 0.1 R DIS 0.4 OWE 0.2 P 0.2 OWE P 0.0 0.0 0 1 2 3 0 1 2 3 FORWARD CURRENT (A) FORWARD CURRENT (A) 5 Version: Q2412