Not for New Designs 1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Maximum instantaneous 1.0 A V forward voltage F 1.2 V Maximum DC reverse TA= 25 °C 0.5 current at rated DC IR μA blocking voltage TA= 100 °C 25 Maximum reverse IF = 0.5 A, IR = 1.0 A, t recovery time I rr 150 250 300 500 ns rr = 0.25 A Typical junction 4.0 V, 1 MHz C capacitance J 25 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Typical thermal resistance RθJA (1) 45 °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5619GP-E3/54 0.425 54 4000 13" diameter paper tape and reel 1N5619GP-E3/73 0.425 73 2000 Ammo pack packaging Revision: 05-Oct-2021 2 Document Number: 88522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000