Datasheet ZXM61P03F (Diodes) - 4
| 制造商 | Diodes |
| 描述 | 30V P-Channel Enhancement Mode MOSFET in SOT23 package |
| 页数 / 页 | 7 / 4 — ZXM61P03F. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise … |
| 文件格式/大小 | PDF / 277 Kb |
| 文件语言 | 英语 |
ZXM61P03F. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER. SYMBOL. MIN. TYP. MAX. UNIT CONDITIONS
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文件文字版本
ZXM61P03F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V Gate-Body Leakage IGSS ⫾100 nA VGS=⫾20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V I =-250µA, V D DS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.35 Ω VGS=-10V, ID=-0.6A 0.55 Ω VGS=-4.5V, ID=-0.3A Forward Transconductance (3) gfs 0.44 S VDS=-10V,ID=-0.3A
DYNAMIC
(3) Input Capacitance Ciss 140 pF VDS=-25 V, VGS=0V, Output Capacitance Coss 45 pF f=1MHz Reverse Transfer Capacitance Crss 20 pF
SWITCHING
(2) (3) Turn-On Delay Time td(on) 1.9 ns Rise Time tr 2.9 ns VDD =-15V, ID=-0.6A RG=6.2Ω, RD=25Ω Turn-Off Delay Time td(off) 8.9 ns (Refer to test circuit) Fall Time tf 5.0 ns Total Gate Charge Qg 4.8 nC VDS=-24V,VGS=-10V, Gate-Source Charge Qgs 0.62 nC ID=-0.6A (Refer to test circuit) Gate Drain Charge Qgd 1.3 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.6A, VGS=0V Reverse Recovery Time (3) trr 14.8 ns Tj=25°C, IF=-0.6A, di/dt= 100A/µs Reverse Recovery Charge(3) Qrr 7.7 nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005 S E M I C O N D U C T O R S 4
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V Gate-Body Leakage IGSS ⫾100 nA VGS=⫾20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V I =-250µA, V D DS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.35 Ω VGS=-10V, ID=-0.6A 0.55 Ω VGS=-4.5V, ID=-0.3A Forward Transconductance (3) gfs 0.44 S VDS=-10V,ID=-0.3A
DYNAMIC
(3) Input Capacitance Ciss 140 pF VDS=-25 V, VGS=0V, Output Capacitance Coss 45 pF f=1MHz Reverse Transfer Capacitance Crss 20 pF
SWITCHING
(2) (3) Turn-On Delay Time td(on) 1.9 ns Rise Time tr 2.9 ns VDD =-15V, ID=-0.6A RG=6.2Ω, RD=25Ω Turn-Off Delay Time td(off) 8.9 ns (Refer to test circuit) Fall Time tf 5.0 ns Total Gate Charge Qg 4.8 nC VDS=-24V,VGS=-10V, Gate-Source Charge Qgs 0.62 nC ID=-0.6A (Refer to test circuit) Gate Drain Charge Qgd 1.3 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.6A, VGS=0V Reverse Recovery Time (3) trr 14.8 ns Tj=25°C, IF=-0.6A, di/dt= 100A/µs Reverse Recovery Charge(3) Qrr 7.7 nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005 S E M I C O N D U C T O R S 4