Datasheet FDN360P (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | PowerTrench Single P-Channel MOSFET in SOT−23 package |
| 页数 / 页 | 6 / 2 — FDN360P. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. … |
| 文件格式/大小 | PDF / 290 Kb |
| 文件语言 | 英语 |
FDN360P. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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FDN360P ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA −30 − − V DBV Breakdown Voltage Temperature Coefficient I DSS D = −250 mA, Referenced to 25_C − −22 − mV/_C DTJ IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V − − −1 mA VDS = −24 V, VGS = 0 V, TJ = 55_C − − −10 IGSSF Gate−Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate−Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −1 −1.9 −3 V DV Gate Threshold Voltage Temperature Coefficient I GS(th) D = −250 mA, Referenced to 25_C − 4 − mV/_C DTJ RDS(on) Static Drain−Source On−Resistance VGS = −10 V, ID = −2 A − 63 80 mW VGS = −10 V, ID = −2 A, TJ = 125_C − 90 136 VGS = −4.5 V, ID = −1.5 A − 100 125 ID(on) On−State Drain Current VGS = −10 V, VDS = −5 V −10 − − A gFS Forward Transconductance VDS = −5 V, ID = −2 A − 5 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1.0 MHz − 298 − pF Coss Output Capacitance − 83 − pF Crss Reverse Transfer Capacitance − 39 − pF
SWITCHING CHARACTERISTICS
(Note 2) td(on) Turn−On Delay Time VDD = −15 V, ID = −1 A, − 6 12 ns VGS = −10 V, RGEN = 6 W tr Turn−On Rise Time − 13 23 ns td(off) Turn−Off Delay Time − 11 20 ns tf Turn−Off Fall Time − 6 12 ns Qg Total Gate Charge VDS = −15 V, ID = −3.6 A, − 6.2 9 nC VGS = −10 V Qgs Gate−Source Charge − 1 − nC Qgd Gate−Drain Charge − 1.2 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − −0.42 A VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = −0.42 A (Note 2) − −0.8 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 250°C/W when mounted on b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz copper a minimum pad Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
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FDN360P ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA −30 − − V DBV Breakdown Voltage Temperature Coefficient I DSS D = −250 mA, Referenced to 25_C − −22 − mV/_C DTJ IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V − − −1 mA VDS = −24 V, VGS = 0 V, TJ = 55_C − − −10 IGSSF Gate−Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate−Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −1 −1.9 −3 V DV Gate Threshold Voltage Temperature Coefficient I GS(th) D = −250 mA, Referenced to 25_C − 4 − mV/_C DTJ RDS(on) Static Drain−Source On−Resistance VGS = −10 V, ID = −2 A − 63 80 mW VGS = −10 V, ID = −2 A, TJ = 125_C − 90 136 VGS = −4.5 V, ID = −1.5 A − 100 125 ID(on) On−State Drain Current VGS = −10 V, VDS = −5 V −10 − − A gFS Forward Transconductance VDS = −5 V, ID = −2 A − 5 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1.0 MHz − 298 − pF Coss Output Capacitance − 83 − pF Crss Reverse Transfer Capacitance − 39 − pF
SWITCHING CHARACTERISTICS
(Note 2) td(on) Turn−On Delay Time VDD = −15 V, ID = −1 A, − 6 12 ns VGS = −10 V, RGEN = 6 W tr Turn−On Rise Time − 13 23 ns td(off) Turn−Off Delay Time − 11 20 ns tf Turn−Off Fall Time − 6 12 ns Qg Total Gate Charge VDS = −15 V, ID = −3.6 A, − 6.2 9 nC VGS = −10 V Qgs Gate−Source Charge − 1 − nC Qgd Gate−Drain Charge − 1.2 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − −0.42 A VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = −0.42 A (Note 2) − −0.8 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RθJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 250°C/W when mounted on b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz copper a minimum pad Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
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