Datasheet IRFP260N (Inchange Semiconductor)
| 制造商 | Inchange Semiconductor |
| 描述 | N-Channel MOSFET Transistor in TO-247 package |
| 页数 / 页 | 2 / 1 — INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFP260N. I … |
| 文件格式/大小 | PDF / 386 Kb |
| 文件语言 | 英语 |
INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFP260N. I RFP260N. FEATURES. DESCRITION. ABSOLUTE MAXIMUM RATINGS(Ta=25
该数据表的模型线
文件文字版本
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N
，
I RFP260N
·
FEATURES
·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·
DESCRITION
·Fast switching ·Ful y Avalanche Rated ·
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Channel-to-case thermal resistance Rth(j-c) 0.5 ℃/W Channel-to-ambient thermal resistance Rth(j-a) 40 ℃/W
isc website
：
www.iscsemi.cn
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFP260N，IIRFP isc N-Channel MOSFET Transistor IRFP260N，IIRF
，
I RFP260N
·
FEATURES
·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·
DESCRITION
·Fast switching ·Ful y Avalanche Rated ·
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Channel-to-case thermal resistance Rth(j-c) 0.5 ℃/W Channel-to-ambient thermal resistance Rth(j-a) 40 ℃/W
isc website
：
www.iscsemi.cn
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFP260N，IIRFP isc N-Channel MOSFET Transistor IRFP260N，IIRF