Datasheet EPC2218 (Efficient Power Conversion) - 4

制造商Efficient Power Conversion
描述100 V, 231 A Enhancement-Mode GaN Power Transistor
页数 / 页7 / 4 — eGaN® FET DATASHEET. Figure 10: Typical Normalized Threshold Voltage vs. …
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eGaN® FET DATASHEET. Figure 10: Typical Normalized Threshold Voltage vs. Temp. Figure 11: Safe Operating Area

eGaN® FET DATASHEET Figure 10: Typical Normalized Threshold Voltage vs Temp Figure 11: Safe Operating Area

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eGaN® FET DATASHEET
EPC2218
Figure 10: Typical Normalized Threshold Voltage vs. Temp. Figure 11: Safe Operating Area
1.4 1000 1.3 ID = 7 mA 1.2 100 1.1 Limited by RDS(on) 1. 10 0.9
I – Drain Current (A) D
Pulse Width 1
Normalized Threshold Voltage
0.8 1 ms 100 µs 0.7 10 µs 0.6 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
T V J – Junction Temperature (°C) DS – Drain-to-Source Voltage (V) TJ = Max Rated, TC = +25°C, Single Pulse Figure 12: Typical Transient Thermal Response Curves Figure 13: Duty Cycle Factor (DCFactor) Illustration for Repetitive Overvoltage Specification Junction-to-Board
1
V Duty Cycle: D 0.5 TO 0.2 0.1
0.1
0.05 PDM Thermal Impedance 0.02 ed 0.01 t T 1 S
0.01
Single Pulse t2 ormaliz t , N Notes: ZθJB Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJB x RθJB + TB
1% is the ratio between T 0.001 O (overvoltage duration) and TS 10-5 10-4 10-3 10-2 10-1 1 10+1 (one switching period).
t1, Rectangular Pulse Duration, seconds Junction-to-Case
1
Duty Cycle: 0.5 0.2
0.1
0.1 0.05 0.02 0.01 PDM Thermal Impedance
0.01
ed t1 Single Pulse t2 ormaliz
0.001
, N Notes: ZθJC Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJC x RθJC + TC
0.000110-6 10-5 10-4 10-3 10-2 10-1 1
t1, Rectangular Pulse Duration, seconds
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