Datasheet NT9002 (Nisshinbo)
| 制造商 | Nisshinbo |
| 描述 | Diode for 1W Class Rectifier in DFN1212-4-HD package |
| 页数 / 页 | 15 / 1 — Datasheet. NT9002HDAE4S. Diode for 1mW Class Rectifier. FEATURES. GENERAL … |
| 文件格式/大小 | PDF / 761 Kb |
| 文件语言 | 英语 |
Datasheet. NT9002HDAE4S. Diode for 1mW Class Rectifier. FEATURES. GENERAL DESCRIPTION. APPLICATIONS. BLOCK DIAGRAM
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Datasheet NT9002HDAE4S Diode for 1mW Class Rectifier FEATURES GENERAL DESCRIPTION
⚫ High reverse voltage*: 20 V The NT9002HDAE4S is a 1 mW-class rectifier diode ⚫ Low forward voltage: 0.1 V typ. @ IF = 2 µA optimized for rectifier circuits in microwave WPT ⚫ Low reverse leakage current: 0.5 µA typ. @ VR = 2 V operating in the 920 MHz, 2.4 GHz, and 5.7 GHz ⚫ Low series resistance: 110Ω typ. bands. @ VF = 0.85 ± 0.01 V This diode features low forward voltage and high ⚫ Low total capacitance: 0.025 pF typ. reverse voltage, enabling a wide dynamic range and @ VR = 2 V, f = 100 MHz high efficiency in WPT rectifier circuits. ⚫ Package size: 1.2 x 1.2 mm typ. t = 0.427 mm max. This diode enables a compact mounting area with its ⚫ RoHS compliant, Halogen free, MSL1 smal DFN package. * Absolute maximum ratings
APPLICATIONS
⚫ Rectifier circuits for microwave wireless power transfer systems DFN1212-4-HD ⚫ Detector 1.2 × 1.2 × 0.427 (mm)
BLOCK DIAGRAM < Gated Anode Diode >
GaAs E-mode HJ-FET Ver.1.1 - 1 - Document Outline FEATURES GENERAL DESCRIPTION APPLICATIONS BLOCK DIAGRAM ■ PRODUCT NAME INFORMATION ■ ORDER INFORMATION ■ PIN DESCRIPTIONS ■ ABSOLUTE MAXIMUM RATINGS ■ THERMAL CHARACTERISTICS ■ ELECTROSTATIC DISCHARGE RATINGS ■ RECOMMENDED OPERATING CONDITIONS ■ ELECTRICAL CHARACTERISTICS (DC) ■ TYPICAL CHARACTERISTICS ■ SPICE MODEL ● Notes on Using the SPICE Model ■ MARKING SPECIFICATION ■ REVISION HISTORY PACKAGE INFORMATION CAUTION
⚫ High reverse voltage*: 20 V The NT9002HDAE4S is a 1 mW-class rectifier diode ⚫ Low forward voltage: 0.1 V typ. @ IF = 2 µA optimized for rectifier circuits in microwave WPT ⚫ Low reverse leakage current: 0.5 µA typ. @ VR = 2 V operating in the 920 MHz, 2.4 GHz, and 5.7 GHz ⚫ Low series resistance: 110Ω typ. bands. @ VF = 0.85 ± 0.01 V This diode features low forward voltage and high ⚫ Low total capacitance: 0.025 pF typ. reverse voltage, enabling a wide dynamic range and @ VR = 2 V, f = 100 MHz high efficiency in WPT rectifier circuits. ⚫ Package size: 1.2 x 1.2 mm typ. t = 0.427 mm max. This diode enables a compact mounting area with its ⚫ RoHS compliant, Halogen free, MSL1 smal DFN package. * Absolute maximum ratings
APPLICATIONS
⚫ Rectifier circuits for microwave wireless power transfer systems DFN1212-4-HD ⚫ Detector 1.2 × 1.2 × 0.427 (mm)
BLOCK DIAGRAM < Gated Anode Diode >
GaAs E-mode HJ-FET Ver.1.1 - 1 - Document Outline FEATURES GENERAL DESCRIPTION APPLICATIONS BLOCK DIAGRAM ■ PRODUCT NAME INFORMATION ■ ORDER INFORMATION ■ PIN DESCRIPTIONS ■ ABSOLUTE MAXIMUM RATINGS ■ THERMAL CHARACTERISTICS ■ ELECTROSTATIC DISCHARGE RATINGS ■ RECOMMENDED OPERATING CONDITIONS ■ ELECTRICAL CHARACTERISTICS (DC) ■ TYPICAL CHARACTERISTICS ■ SPICE MODEL ● Notes on Using the SPICE Model ■ MARKING SPECIFICATION ■ REVISION HISTORY PACKAGE INFORMATION CAUTION