Datasheet 2N6167 (Digitron Semiconductors)
| 制造商 | Digitron Semiconductors |
| 描述 | 13A Silicon Controlled Rectifier in TO-48 ISO package |
| 页数 / 页 | 3 / 1 — High-reliability discrete products. and engineering services since 1977. … |
| 文件格式/大小 | PDF / 730 Kb |
| 文件语言 | 英语 |
High-reliability discrete products. and engineering services since 1977. FEATURES. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
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2N6167-2N6170
High-reliability discrete products
SILICON CONTROLLED RECTIFIER
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Peak forward and reverse blocking voltage
(1) (TJ = -40 to 100°C) 2N6167 VDRM 100 Volts 2N6168 VRRM 200 2N6169 400 2N6170 600
Peak non-repetitive reverse blocking voltage
(t ≤ 5ms) 2N6167 150 V Volts 2N6168 RSM 250 2N6169 450 2N6170 650
Average forward current
(TC = -40 to +65°C) IT(AV) 13 Amps (85°C) 6.5
Peak surge current
(1 cycle, 60Hz, TC = 65°C) I Amps (1.5ms pulse @ T TSM 240 J = 100°C) 560 Preceded and fol owed by no current or voltage
Circuit fusing
(TJ = -40 to +100°C, t = 8.3ms) I2t 235 A2s
Peak gate power
PGM 5 Watts
Average gate power
PG(AV) 0.5 Watts
Forward peak gate current
IGM 2 Amps
Operating junction temperature range
TJ -40 to 100 °C
Storage temperature range
Tstg -40 to 150 °C
Stud torque
30 In. lb.
Thermal resistance, junction to case
RӨJC 1.5 °C/W Note 1: Ratings apply for zero or negative gate voltage. Devices shal not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Rev. 20150306
High-reliability discrete products
SILICON CONTROLLED RECTIFIER
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Peak forward and reverse blocking voltage
(1) (TJ = -40 to 100°C) 2N6167 VDRM 100 Volts 2N6168 VRRM 200 2N6169 400 2N6170 600
Peak non-repetitive reverse blocking voltage
(t ≤ 5ms) 2N6167 150 V Volts 2N6168 RSM 250 2N6169 450 2N6170 650
Average forward current
(TC = -40 to +65°C) IT(AV) 13 Amps (85°C) 6.5
Peak surge current
(1 cycle, 60Hz, TC = 65°C) I Amps (1.5ms pulse @ T TSM 240 J = 100°C) 560 Preceded and fol owed by no current or voltage
Circuit fusing
(TJ = -40 to +100°C, t = 8.3ms) I2t 235 A2s
Peak gate power
PGM 5 Watts
Average gate power
PG(AV) 0.5 Watts
Forward peak gate current
IGM 2 Amps
Operating junction temperature range
TJ -40 to 100 °C
Storage temperature range
Tstg -40 to 150 °C
Stud torque
30 In. lb.
Thermal resistance, junction to case
RӨJC 1.5 °C/W Note 1: Ratings apply for zero or negative gate voltage. Devices shal not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Rev. 20150306