Datasheet BC372, BC373 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | NPN Bipolar Darlington Transistor in TO-92 package |
| 页数 / 页 | 4 / 2 — BC372, BC373. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. … |
| 文件格式/大小 | PDF / 55 Kb |
| 文件语言 | 英语 |
BC372, BC373. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BC372, BC373 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1) V(BR)CES Vdc (IC = 100 mAdc, IB = 0) BC372 100 − − BC373 80 − − Collector −Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) BC372 100 − − BC373 80 − − Emitter −Base Breakdown Voltage V(BR)EBO 12 − − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = 80 Vdc, IE = 0) BC372 − − 100 (VCB = 60 Vdc, IE = 0) BC373 − − 100 Emitter Cutoff Current IEBO − − 100 nAdc (VEB = 10 V, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE K (IC = 250 mAdc, VCE = 5.0 Vdc) 8.0 − − (IC = 100 mAdc, VCE = 5.0 Vdc) 10 − 160 Collector −Emitter Saturation Voltage VCE(sat) − 1.0 1.1 Vdc (IC = 250 mAdc, IB = 0.25 mAdc) Base −Emitter Saturation Voltage VBE(sat) − 1.4 2.0 Vdc (IC = 250 mAdc, IB = 0.25 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product fT 100 200 − MHz (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance Cob − 10 25 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure NF − 2.0 − dB (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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BC372, BC373 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage(1) V(BR)CES Vdc (IC = 100 mAdc, IB = 0) BC372 100 − − BC373 80 − − Collector −Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) BC372 100 − − BC373 80 − − Emitter −Base Breakdown Voltage V(BR)EBO 12 − − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = 80 Vdc, IE = 0) BC372 − − 100 (VCB = 60 Vdc, IE = 0) BC373 − − 100 Emitter Cutoff Current IEBO − − 100 nAdc (VEB = 10 V, IC = 0)
ON CHARACTERISTICS
(Note 1) DC Current Gain hFE K (IC = 250 mAdc, VCE = 5.0 Vdc) 8.0 − − (IC = 100 mAdc, VCE = 5.0 Vdc) 10 − 160 Collector −Emitter Saturation Voltage VCE(sat) − 1.0 1.1 Vdc (IC = 250 mAdc, IB = 0.25 mAdc) Base −Emitter Saturation Voltage VBE(sat) − 1.4 2.0 Vdc (IC = 250 mAdc, IB = 0.25 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product fT 100 200 − MHz (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance Cob − 10 25 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure NF − 2.0 − dB (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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